Boron carbide F230 for sapphire wafer grinding
Boron carbide abrasives have good performance in the double-sided grinding of sapphire and the thinning and polishing of sapphire-based LED epitaxial wafers.
Due to the high strength and hardness of the sapphire crystal, it has brought great difficulties to the processing enterprises. From the point of view of materials and grinding academia, the best materials for processing and grinding sapphire crystals are synthetic diamond, boron carbide, and silicon dioxide. Due to the excessive hardness of artificial diamond, the surface of the sapphire wafer will be scratched when grinding, which will affect the light transmittance of the wafer, and it is expensive. However, insufficient hardness of silica and poor grinding force are time-consuming and labor-intensive in the grinding process. Therefore, boron carbide abrasives are ideal materials for processing and grinding sapphire crystals.
boron carbide for sapphire wafer grinding is produced by high temperature smelting boric aid and carbon materails in electric furnaces.
boron carbide for sapphire wafer grinding chemical composition(%) | ||
B % | 78-81 | |
C% | 17-22 | |
Fe2O3% | 0.2-0.4 | |
B4C% | 95-99 | |
boron carbide for sapphire wafer grinding physical properties | ||
Color | Black | |
Molecular Formula | B4C | |
Density & phase | 2.52g/cm3 Solid | |
Solubility In Water | Insoluble | |
Melting Point | 2450°C | |
Boiling point | 3500°C | |
Crystal Structure | Rhombohedral | |
Mohs Hardness | 9.6 | |
Micro Hardness | 4950kgf/mm2 |
Avaliable Size
boron carbide avaliable size | |
grit size sand | 40#46#54#60#70#80#90#100#120#150#180#220# |
macropowder | -325# -200# -10um -20um |
micropowder | F230F240F280F320F360F400F500F600F800F1000F1200F1500F2500 |
packaging
boron carbide for sapphire wafer grinding Packing Details
1. 20kgs paper bag
2. 1mt wooden box
boron carbide factory
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