Difference between Boron Carbide and Silicon Carbide
Basic Information:
Main Component: Silicon carbide is composed of SiC and is divided into green silicon carbide and black silicon carbide.
The main component of boron carbide is B₄C.
Color Appearance: Boron carbide is bright black with glass crystals; Silicon carbide is black-green.
Physical Properties:
Porosity: At room temperature, the Vickers porosity of silicon carbide is 28-34GPa and the Mohs porosity is 9.5;
The Vickers hardness of boron carbide is 35-45GPa and the Mohs hardness is 9.3.
Silicon carbide is a traditional abrasive, while boron carbide is a superhard abrasive.
Density: The theoretical density of silicon carbide is 3.2g/cm³,
The theoretical density of boron carbide is 2.52g/cm³, and boron carbide is the lowest density among known ceramic materials.
Melting point: Different from silicon carbide
Silicon carbide melting point: 2750℃,
Boron carbide melting point: 2450℃,