Boron Carbide B4C F280 grinding for Sapphire Wafer LED

Boron Carbide B4C F280 grinding for Sapphire Wafer LED

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Boron  Carbide                                                                                         

Boron Carbide B4C F280 grinding for Sapphire Wafer LED

Boron carbide have good performance in the double-sided grinding of sapphire and the thinning and polishing of sapphire-based LED epitaxial wafers.

Due to the high strength and hardness of the sapphire crystal, it has brought great difficulties to the processing enterprises. From the point of view of materials and grinding academia, the best materials for processing and grinding sapphire crystals are synthetic diamond, boron carbide, and silicon dioxide. Due to the excessive hardness of artificial diamond, the surface of the sapphire wafer will be scratched when grinding, which will affect the light transmittance of the wafer, and it is expensive. However, insufficient hardness of silica and poor grinding force are time-consuming and labor-intensive in the grinding process. Therefore, boron carbide abrasives are ideal materials for processing and grinding sapphire crystals.

Boron carbide, also known as black diamond, is an inorganic substance with a chemical formula of B4C, usually gray-black micropowder. It is one of the three hardest materials known (second only to diamond and cubic boron nitride). It is used in grinding for Sapphire Wafer LED tankarmor, bulletproof vests and many industrial applications. Its Mohs hardness is about 9.6

Boron Carbide B4C F280 grinding for Sapphire Wafer LED

 

boron Carbide grinding for Sapphire Wafer is produced by high temperature smelting boric aid and carbon materails in electric furnaces.

boron Carbide for Sapphire Wafer chemical composition(%)

B %

78-81

C%

17-22

Fe2O3%

0.2-0.4

                                       B4C%

95-99

boron Carbide grinding for Sapphire Wafer physical properties

Color

Black

Molecular Formula

B4C

Density & phase

2.52g/cm3   Solid

Solubility In Water

Insoluble

Melting Point

2450°C

Boiling point

3500°C

Crystal Structure

Rhombohedral

Mohs Hardness

9.6

Micro Hardness

4950kgf/mm2


Boron carbide Avaliable Size
                 

size

particle size distribution( um)

B%

C%

Fe2O3

B4C%

F230

53±3

77-80

17-22

0.3-0.5

96-97

F240

44.5±2

77-80

17-22

0.3-0.5

96-97

F280

36.5±1.5

77-80

17-22

0.3-0.5

96-97

F320

29.2±1.5

76-79

17-21

0.3-0.6

95-97

F360

22.8±1.5

76-79

18-22

0.3-0.7

94-97

F400

17.3±1

76-79

18-22

0.3-0.7

94-97

F500

12.8±1

74-78

17-21

0.4-0.9

92-94

F600

9.3±1

75-78

18-22

0.1-0.8

90-94

F800

6.5±1

75-78

18-22

0.1-0.8

90-94

F1000

4.5±0.8

75-78

18-22

0.1-0.8

90-94

F1200

3±0.5

75-78

18-22

0.1-0.8

90-94

packaging                                                                                                   

Sapphire grinding boron carbide Packing Details  

1. 20kgs paper bag
2. 1mt wooden box

Boron Carbide B4C F280 grinding for Sapphire Wafer LEDBoron Carbide B4C F280 grinding for Sapphire Wafer LED

 

boron Carbide grinding for Sapphire Wafer factory

Boron Carbide B4C F280 grinding for Sapphire Wafer LEDBoron Carbide B4C F280 grinding for Sapphire Wafer LEDBoron Carbide B4C F280 grinding for Sapphire Wafer LEDBoron Carbide B4C F280 grinding for Sapphire Wafer LEDBoron Carbide B4C F280 grinding for Sapphire Wafer LEDBoron Carbide B4C F280 grinding for Sapphire Wafer LEDBoron Carbide B4C F280 grinding for Sapphire Wafer LED

 

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