Will boron carbide doped in silicon’s conductivity increase?
Boron carbide doped in silicon will increase. Boron carbide is a wide -ranging semiconductor material, which has high resistivity and excellent thermal stability. It is one of the ideal materials for preparing high -temperature transistors, integrated circuits and solar cells. Boronized boronized boron -to -silicon can form silicon carbide composite materials. This material has high electrical performance and good high temperature stability. Under high temperature conditions, silicon carbide composite materials can maintain high load migration and conductivity, thereby improving the conductivity of silicon. Therefore, boron carbide doping can improve its electrical performance in silicon.
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